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| 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm * * * * High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Zener diode included between collector and base. Unclamped inductive load energy: E = 150 mJ (min) Absolute Maximum Ratings (Tc = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 10 60 10 7 5 8 0.5 2.0 30 150 -55 to 150 Unit V V V A JEDEC A W C C SC-67 2-10R1A JEITA TOSHIBA Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base 5 k 150 Emitter 1 2006-11-21 2SD2131 Electrical Characteristics (Tc = 25C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat) ES/B ton Test Condition VCB = 45 V, IE = 0 VCE = 45 V, IB = 0 VEB = 6 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 3 V, IC = 3 A VCE = 3 V, IC = 5 A IC = 3 A, IB = 6 mA IC = 5 A, IB = 20 mA IC = 3 A, IB = 6 mA (Note 1) Min 50 50 2000 1000 150 Typ. 60 60 1.1 1.3 1.7 Max 10 10 2.5 70 70 15000 1.5 2.5 2.5 V V mJ Unit A A mA V V Collector-emitter saturation voltage Base-emitter saturation voltage Unclamped inductive load energy Turn-on time Output 20 s IB1 Input IB2 IB1 IB2 10 1.0 Switching time Storage time tstg 4.0 s VCC = 30 V Fall time tf IB1 = -IB2 = 6 mA, duty cycle 1% 2.5 Note 1: Measurement circuit for unclamped inductive load energy VCC L = 10 mH IB1 = 0.1 A 0 PW T.U.T IB1 IB2 IB2 = -0.1 A ICP Clamp (C-B Zener) VCE IC 0 Note 2: (1) Pulse width adjusted for desired ICP (ICP = 5.47 A min) (2) E = 1/2 L ICP2 Marking D2131 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2131 IC - VCE 8 8 5 3 2 1.5 6 1 0.7 4 0.5 Common emitter Tc = 25C IC - VBE (A) (A) 6 Collector current IC Collector current IC 4 2 IB = 0.3 mA 2 Tc = 100C 25 -55 Common emitter 0 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 VCE = 3 V 3.2 4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 30000 Common emitter VCE = 3 V 10000 2.4 VCE - IB VCE (V) 2.0 IC = 8 A DC current gain hFE 5000 3000 Tc = 100C 25 -55 1000 500 1.6 5 Collector-emitter voltage 1.2 1 0.8 0.1 3 0.4 Common emitter 0 0.1 Tc = 25C 0.3 0.5 1 3 5 10 30 50 100 300 200 0.05 0.1 0.3 0.5 1 3 5 10 20 Collector current IC (A) Base current IB (mA) VCE (sat) - IC 10 10 IC/IB = 250 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Common emitter Common emitter 5 3 Tc = -55C 25 100 IC/IB = 250 Collector-emitter saturation voltage VCE (sat) (V) 5 3 1 25 0.5 0.3 0.1 Tc = -55C 1 100 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Collector current IC (A) Collector current IC (A) 3 2006-11-21 2SD2131 Rth - tw 100 Transient thermal resistance Rth (C/W) (1) No heat sink Ta = 25C 30 (2) Infinite heat sink Tc = 25C (1) 10 (2) 3 1 0.3 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 20 35 PC - Ta (W) (1) Tc = Ta 30 (1) 25 20 15 10 5 (2) 0 0 25 50 75 100 125 150 175 Infinite heat sink (2) No heat sink 5 IC max (continuous) 10 ms* 1 ms* Collector current IC 3 DC operation Tc = 25C 1 0.5 *: Single nonrepetitive 0.3 pulse Tc = 25C Curves must be derated linearly with increase in temperature. 3 5 10 Collector power dissipation PC 10 I max (pulsed)* C (A) Ambient temperature Ta (C) VCEO max 30 50 100 0.1 1 Collector-emitter voltage VCE (V) 4 2006-11-21 2SD2131 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21 |
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